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march 2016 docid025821 rev 4 1 / 16 this is information on a product in full production. www.st.com STD40P3LLH6 p - channel - 30 v, 12 m typ., - 40 a stripfet? h6 power mosfet in a dpak package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d STD40P3LLH6 - 30 v 15 m? - 40 a ? very low on - resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p - channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking package packing STD40P3LLH6 40p3llh6 dpak tape and reel am 1 1258v1 d(2, t ab) s(3) g(1)
contents STD40P3LLH6 2 / 16 docid025821 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 dpak (to252) type a2 mechanical data ................................ ........ 10 4.2 dpak (to2 52) packing information ................................ ................ 13 5 revision history ................................ ................................ ............ 15
STD40P3LLH6 electrical ratings docid025821 rev 4 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage - 30 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c - 40 a i d drain current (continuous) at t c = 100 c - 30.7 a i dm (1) drain current (pulsed) - 160 a p tot total dissipation at t c = 25 c 60 w t stg storage temperature range - 55 to 175 c t j operating junction temperature range c notes: (1) pulse width is limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 2.5 c/w r thj - pcb (1) thermal resistance junction - pcb max 50 notes: (1) when mounted on fr - 4 board of 1 inch2, 2oz cu.
electrical characteristics STD40P3LLH6 4 / 16 docid025821 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified). table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = - 1 ma - 30 v i dss zero gate voltage drain current v gs = 0, v ds = - 30 v - 1 a v gs = 0, v ds = - 30 v, t c = 125 c (1) - 10 a i gss gate - body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = - 250 a - 1 - 2.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = - 20 a 12 15 m? v gs = - 4.5 v, i d = - 20 a 18 22.5 m? notes: (1) defined by design, not subject to production test. table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = - 25 v, f = 1 mhz, v gs = 0 - 2615 - pf c oss output capacitance - 340 - pf c rss reverse transfer capacitance - 235 - pf q g total gate charge v dd = - 15 v, i d = - 40 a, v gs = - 4.5 v (see figure 14: "gate charge test circuit" ) - 24 - nc q gs gate - source charge - 9 - nc q gd gate - drain charge - 8 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = - 15 v, i d = - 20 a, r g = 4.7 , v gs = - 10 v (see figure 13: "switching times test circuit for resistive load" ) - 13.2 - ns t r rise time - 93 - ns t d(off) turn - off delay time - 50 - ns t f fall time - 18 - ns
STD40P3LLH6 electrical characteristics docid025821 rev 4 5 / 16 table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd = - 40 a, v gs = 0 - - 1.1 v t rr reverse recovery time i sd = - 40 a, di/dt = 100 a/s v dd = - 24 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 20 ns q rr reverse recovery charge - 16 nc i rrm reverse recovery current - - 1.6 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STD40P3LLH6 6 / 16 docid025821 rev 4 2.1 electrical characteristics (curves) note: for the p - channel power mosfet, current and voltage polarities are reversed. figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STD40P3LLH6 electrical characteristics docid025821 rev 4 7 / 16 figure 8 : capacitan ce variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STD40P3LLH6 8 / 16 docid025821 rev 4 3 test circuits figure 13 : switching times test circuit fo r resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times
STD40P3LLH6 packa ge information docid025821 rev 4 9 / 16 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STD40P3LLH6 10 / 16 docid025821 rev 4 4.1 dpak (to252) type a2 mechanical data figure 16 : dpak (to - 252) type a2 package outline 0068772_type-a2_rev21
STD40P3LLH6 package information docid025821 rev 4 11 / 16 table 8: dpak (to - 252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
package information STD40P3LLH6 12 / 16 docid025821 rev 4 figure 17 : dpak (to - 252) recommended footprint (dimensions are in mm)
STD40P3LLH6 package information docid025821 rev 4 13 / 16 4.2 dpak (to252) packing information figure 18 : dpak (to - 252) tape outline
package information STD40P3LLH6 14 / 16 docid025821 rev 4 figure 19 : dpak (to - 252) reel outline table 9: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
STD40P3LLH6 revision history docid025821 rev 4 15 / 16 5 revision history table 10: document revision history date revision changes 23 - jan - 2014 1 first release. 07 - mar - 2016 2 modified: title and r ds(on) max value. modified: table 4: "on /o ff states", table 5: "dynamic", table 6: "switching times" and table 7: "source drain diode". minor text changes. 21 - mar - 2016 3 modified: figure 4: "output characteristics" and figure 5: "transfer characteristics". minor text changes. 30 - mar - 2016 4 updated title. minor text changes.
STD40P3LLH6 16 / 16 docid025821 rev 4 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information s et forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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